| TYPE | DESCRIPTION |
|---|
| Case/Package | REEL |
| Polarity | N-CH |
| Drain to Source Voltage (Vds) | 55V |
| Continuous Drain Current (Ids) | 5.2A |
The IRLL2705TRPBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The package is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heat sinking. Power dissipation of 1W is possible in a typical surface-mount application.
● Dynamic dV/dt rating
● Logic level gate drive
● Ease of paralleling
● Advanced process technology
● Low static drain-to-source ON-resistance
Infineon
9 Pages / 0.15 MByte
Infineon
27 Pages / 0.31 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
1 Pages / 0.13 MByte
International Rectifier
Trans MOSFET N-CH 55V 5.2A 4Pin(3+Tab) SOT-223 T/R
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.04Ω; ID 3.8A; SOT-223; PD 1W; VGS +/-16V; -55
International Rectifier
Trans MOSFET N-CH 55V 5.2A 4Pin(3+Tab) SOT-223 T/R
International Rectifier
Trans MOSFET N-CH 55V 5.2A 4Pin (3+Tab) SOT-223 T/R
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