| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | REEL |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 55V |
| Continuous Drain Current (Ids) | 5.2A |
The IRLL2705PBF is a 55V single N-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The power MOSFET is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place, it has the added advantage of improved thermal performance due to an enlarged tab for heat sinking. Power dissipation of 1.0W is possible in a typical surface mount application.
● Surface mount
● Dynamic dV/dt rating
● Logic level gate drive
● Fast switching
● Easy to parallel
● Advanced process technology
● Ultra low on-resistance
Infineon
9 Pages / 0.21 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
International Rectifier
Trans MOSFET N-CH 55V 5.2A 4Pin(3+Tab) SOT-223 T/R
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.04Ω; ID 3.8A; SOT-223; PD 1W; VGS +/-16V; -55
International Rectifier
Trans MOSFET N-CH 55V 5.2A 4Pin(3+Tab) SOT-223 T/R
International Rectifier
Trans MOSFET N-CH 55V 5.2A 4Pin (3+Tab) SOT-223 T/R
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