| TYPE | DESCRIPTION |
|---|
| Number of Pins | 3 Pin |
| Case/Package | REEL |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 55V |
| Continuous Drain Current (Ids) | 5A |
The IRLL024ZPBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
● Advanced process technology
● Repetitive avalanche allowed up to Tjmax
● Logic level
Infineon
10 Pages / 0.25 MByte
Infineon
10 Pages / 0.21 MByte
Infineon
2 Pages / 0.17 MByte
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.065Ω; ID 4.4A; SOT-223; PD 2.1W; VGS +/-16V
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.065Ω; ID 4.4A; SOT-223; PD 2.1W; VGS +/-16V
International Rectifier
Trans MOSFET N-CH 55V 5A 4Pin(3+Tab) SOT-223 T/R
International Rectifier
Trans MOSFET N-CH 55V 5A 4Pin(3+Tab) SOT-223 Tube
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