| TYPE | DESCRIPTION |
|---|
| Case/Package | REEL |
| Polarity | N-CH |
| Drain to Source Voltage (Vds) | 55V |
| Continuous Drain Current (Ids) | 4.4A |
The IRLL024NTRPBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation for use in a wide variety of applications. It is designed for surface-mount using vapour phase, infrared or wave soldering techniques.
● Advanced process technology
● Ultra-low ON-resistance
● Fully avalanche rating
● Low static drain-to-source ON-resistance
● Dynamic dV/dt rating
● Logic level
Infineon
8 Pages / 0.11 MByte
Infineon
27 Pages / 0.31 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
3 Pages / 0.16 MByte
Infineon
1 Pages / 0.13 MByte
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.065Ω; ID 4.4A; SOT-223; PD 2.1W; VGS +/-16V
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.065Ω; ID 4.4A; SOT-223; PD 2.1W; VGS +/-16V
International Rectifier
Trans MOSFET N-CH 55V 5A 4Pin(3+Tab) SOT-223 T/R
International Rectifier
Trans MOSFET N-CH 55V 5A 4Pin(3+Tab) SOT-223 Tube
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