| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 2.70 A |
| Case/Package | TO-261-4, TO-261AA |
| Polarity | N-Channel |
| Power Dissipation | 3.10 W |
| Drain to Source Voltage (Vds) | 60.0 V |
| Continuous Drain Current (Ids) | 2.70 A |
| Rise Time | 110 ns |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
The IRLL014PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heat sinking. Power dissipation of greater than 1.25W is possible in a typical surface-mount application.
● Dynamic dV/dt rating
● Logic-level gate drive
● RDS (ON) Specified at VGS = 4 and 5V
● Ease of paralleling
● Surface-mount
VISHAY
8 Pages / 0.15 MByte
VISHAY
9 Pages / 0.16 MByte
Vishay Siliconix
MOSFET N-CH 60V 2.7A SOT223
International Rectifier
MOSFET N-CH 60V 2.7A SOT223
Vishay Semiconductor
Trans MOSFET N-CH 60V 2.7A 4Pin(3+Tab) SOT-223
International Rectifier
Trans MOSFET N-CH 55V 2.8A 4Pin(3+Tab) SOT-223 T/R
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.14Ω; ID 2.8A; SOT-223; PD 2.1W; VGS +/-16V
Vishay Semiconductor
Trans MOSFET N-CH 60V 2.7A 4Pin(3+Tab) SOT-223 T/R
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 0.2Ω; ID 2.7A; SOT-223; PD 3.1W; VGS +/-10V
VISHAY
SOT-223-3 N-CH 60V 2.7A 200mΩ
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
