| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 4 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 1.00 A |
| Case/Package | DIP |
| Polarity | N-Channel |
| Power Dissipation | 1.30 W |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Continuous Drain Current (Ids) | 1.00 A |
| Rise Time | 47.0 ns |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
The IRLD110PBF is a 100V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is a low cost machine-insertiable case style which can be stacked in multiple combinations on standard 0.1-inch pin centres. The dual drain servers as a thermal link to the mounting surface for power dissipation levels up to 1W.
● Dynamic dV/dt rating
● Repetitive avalanche rated
● 175°C Operating temperature
● Easy to parallel
● Simple drive requirement
● For automatic insertion
● End stackable
● Logic level gate drive
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