TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Case/Package | REEL |
Polarity | N-Channel |
Drain to Source Voltage (Vds) | 100V |
Continuous Drain Current (Ids) | 180A |
The IRLB4030PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for DC motor drive, high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.
● Optimized for logic level drive
● Very low RDS (ON) at 4.5V VGS
● Superior R
●Q at 4.5V VGS
● Improved gate, avalanche and dynamic dv/dt ruggedness
● Fully characterized capacitance and avalanche SOA
● Enhanced body diode dV/dt and dI/dt capability
Infineon
8 Pages / 0.27 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
International Rectifier
Trans MOSFET N-CH 100V 180A 3Pin(3+Tab) TO-220AB Tube
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