| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 200 V |
| Current Rating | 18.0 A |
| Case/Package | TO-220 |
| Drain to Source Resistance (on) (Rds) | 180 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 110 W |
| Drain to Source Voltage (Vds) | 200 V |
| Breakdown Voltage (Drain to Source) | 200 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 18.0 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The IRL640A is a N-channel enhancement-mode Power FET produced using Fairchild"s proprietary planar DMOS technology. This advanced technology has been especially tailored to minimize ON-state resistance, provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode. It is well suited for high efficiency switching DC-to-DC converters, switch mode power supplies, DC-to-AC converters for uninterrupted power supply.
● Logic-level gate drive
● Improved dV/dt capability
● 100% Avalanche tested
● Fast switching
● 40nC Typical low gate charge
● 95pF Typical low Crss
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