| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 200 V |
| Continuous Drain Current (Ids) | 9.00 A |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
The IRL630PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is universally preferred for power dissipation levels to approximately 50W. The low thermal resistance of the package contributes to its wide acceptance throughout the industry.
● Dynamic dV/dt rating
● -55 to 150°C Operating temperature range
● Repetitive avalanche rated
● Logic-level gate drive
● Ease of paralleling
● RDS (ON) Specified at VGS = 4 and 5V
VISHAY
9 Pages / 2.22 MByte
Vishay Siliconix
MOSFET N-CH 200V 9A TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 200V 9A 3Pin(3+Tab) TO-220AB
International Rectifier
MOSFET N-CH 200V 9A TO-220AB
IRF
Power MOSFET(Vdss=200V, RdS(on)=0.4Ω, Id=9A)
VISHAY
TO-220-3 N-CH 200V 9A 400mΩ
Vishay Semiconductor
Trans MOSFET N-CH 200V 9A 3Pin(3+Tab) TO-220AB
Fairchild
Trans MOSFET N-CH 200V 9A 3Pin(3+Tab) TO-220AB Rail
Vishay Semiconductor
VISHAY IRL630SPBF MOSFET Transistor, N Channel, 9A, 200V, 400mohm, 5V, 2V
Vishay Siliconix
MOSFET N-CH 200V 9A D2PAK
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
