| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Voltage Rating (DC) | 200 V |
| Current Rating | 5.20 A |
| Drain to Source Resistance (on) (Rds) | 800 mΩ (max) |
| Drain to Source Voltage (Vds) | 200 V |
| Breakdown Voltage (Drain to Source) | 200 V (min) |
| Continuous Drain Current (Ids) | 5.20 A |
| Rise Time | 31.0 ns |
Description
●Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
●Isolated Package
●High Voltage Isolation = 2.5KVRMS
●Sink to Lead Creepage Dist. 4.8mm
●Logic-Level Gate Drive
●RDS(ON) Specified at VGS = 4V & 5V
●Fast Switching
●Ease of paralleling
International Rectifier
0.28 MByte
International Rectifier
8 Pages / 0.28 MByte
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
