TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Voltage Rating (DC) | 200 V |
Current Rating | 5.20 A |
Drain to Source Resistance (on) (Rds) | 800 mΩ (max) |
Drain to Source Voltage (Vds) | 200 V |
Breakdown Voltage (Drain to Source) | 200 V (min) |
Continuous Drain Current (Ids) | 5.20 A |
Rise Time | 31.0 ns |
Description
●Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
●Isolated Package
●High Voltage Isolation = 2.5KVRMS
●Sink to Lead Creepage Dist. 4.8mm
●Logic-Level Gate Drive
●RDS(ON) Specified at VGS = 4V & 5V
●Fast Switching
●Ease of paralleling
International Rectifier
0.28 MByte
International Rectifier
8 Pages / 0.28 MByte
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