| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | REEL |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 100V |
| Continuous Drain Current (Ids) | 10A |
The IRL520NPBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
● 175°C Operating temperature
● Dynamic dV/dt rating
● Fully avalanche rated
● Logic level gate drive
Infineon
9 Pages / 0.3 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
1 Pages / 0.12 MByte
Vishay Semiconductor
Trans MOSFET N-CH 100V 9.2A 3Pin(3+Tab) TO-220
Vishay Siliconix
MOSFET N-CH 100V 9.2A TO-220AB
Major Brands
Transistor N Channel MOSFET IRL520N 100V 9.2A TO-220
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.27Ω; ID 9.2A; TO-220AB; PD 60W; VGS +/-10V
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.18Ω; ID 10A; TO-220AB; PD 48W; VGS +/-16V
VISHAY
TO-220-3 N-CH 100V 9.2A 270mΩ
International Rectifier
MOSFET 100V 1 N-CH HEXFET 180mOhms 13.3NC
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