| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | REEL |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 30V |
| Continuous Drain Current (Ids) | 140A |
The IRL3803PBF is a HEXFET® fifth generation N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient device for use in a wide variety of applications. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.
● Logic level gate drive
● Advanced process technology
● Dynamic dV/dt rating
● Fully avalanche rating
Infineon
8 Pages / 2.56 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
5 Pages / 0.04 MByte
Infineon
1 Pages / 0.14 MByte
IRF
Power MOSFET(Vdss=30V, Rds(on)=0.006Ω, Id=140A)
International Rectifier
MOSFET N-CH 30V 140A D2PAK
International Rectifier
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International Rectifier
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.006Ω; ID 140A; TO-220AB; PD 200W; VGS +/-16V
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