| TYPE | DESCRIPTION |
|---|
| Case/Package | REEL |
| Polarity | N-CH |
| Drain to Source Voltage (Vds) | 55V |
| Continuous Drain Current (Ids) | 86A |
The IRL3705ZSPBF is a HEXFET® N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
● Logic level
● Advanced process technology
● Repetitive avalanche allowed up to Tjmax
Infineon
12 Pages / 0.36 MByte
Infineon
12 Pages / 0.47 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
12 Pages / 0.56 MByte
International Rectifier
Trans MOSFET N-CH 55V 86A 3Pin(3+Tab) TO-220AB Tube
International Rectifier
Trans MOSFET N-CH 55V 89A 3Pin(2+Tab) D2PAK T/R
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 6.5Milliohms; ID 75A; D2Pak; PD 130W; VGS +/-16
International Rectifier
Trans MOSFET N-CH 55V 86A 3Pin(3+Tab) TO-262 Tube
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