| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | REEL |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 55V |
| Continuous Drain Current (Ids) | 104A |
The IRL2505SPBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The surface-mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible ON-resistance in any existing surface-mount package. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
● Logic level gate drive
● Advanced process technology
● Fast switching
● Fully avalanche rating
Infineon
11 Pages / 0.28 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
12 Pages / 0.47 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
9 Pages / 0.14 MByte
International Rectifier
Trans MOSFET N-CH 55V 104A 3Pin(3+Tab) TO-220AB
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.008Ω; ID 104A; TO-220AB; PD 200W; VGS +/-16V
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.008Ω; ID 104A; D2Pak; PD 200W; VGS +/-16V
International Rectifier
Trans MOSFET N-CH 55V 104A 3Pin(2+Tab) D2PAK T/R
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