| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | REEL |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 30V |
| Continuous Drain Current (Ids) | 116A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
The IRL2203NPBF is a 30V single N-channel Advanced HEXFET® Power MOSFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The power MOSFET is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.
● Advanced process technology
● Ultra low on-resistance
● Dynamic dV/dt rating
● Fast switching
● Fully avalanche rated
● 175°C Operating temperature
Infineon
9 Pages / 0.18 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
5 Pages / 0.04 MByte
Infineon
1 Pages / 0.14 MByte
International Rectifier
Power MOSFET(Vdss=30V, Rds(on)=7mohm, Id=116A)
IRF
Power MOSFET(Vdss=30V, Rds(on)=7mohm, Id=116A)
International Rectifier
Trans MOSFET N-CH 30V 116A 3Pin(3+Tab) TO-220AB Tube
International Rectifier
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 7 Milliohms; ID 116A; D2Pak; PD 180W; VGS +/-16V
International Rectifier
MOSFET N-CH 30V 116A TO-220AB
International Rectifier
Trans MOSFET N-CH Si 30V 116A 3Pin(3+Tab) TO-262
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