Description
●Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
●Advanced Process Technology
●Ultra Low On-Resistance
●Dynamic dv/dt Rating
●175°C Operating Temperature
●Fast Switching
●Fully Avalanche Rated
International Rectifier
0.21 MByte
International Rectifier
Power MOSFET(Vdss=30V, Rds(on)=7mohm, Id=116A)
IRF
Power MOSFET(Vdss=30V, Rds(on)=7mohm, Id=116A)
International Rectifier
Trans MOSFET N-CH 30V 116A 3Pin(3+Tab) TO-220AB Tube
International Rectifier
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 7 Milliohms; ID 116A; D2Pak; PD 180W; VGS +/-16V
International Rectifier
MOSFET N-CH 30V 116A TO-220AB
International Rectifier
Trans MOSFET N-CH Si 30V 116A 3Pin(3+Tab) TO-262
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