| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | REEL |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 40V |
| Continuous Drain Current (Ids) | 130A |
The IRL1004PBF is a HEXFET® fifth generation N-channel Power MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.
● Logic level gate drive
● Advanced process technology
● Dynamic dV/dt rating
● Fully avalanche rating
Infineon
9 Pages / 0.15 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
5 Pages / 0.04 MByte
Infineon
1 Pages / 0.14 MByte
International Rectifier
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International Rectifier
Trans MOSFET N-CH 40V 130A 3Pin(3+Tab) TO-220AB Tube
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MOSFET, Power; N-Ch; VDSS 40V; RDS(ON) 0.0065Ω; ID 130A; D2Pak; PD 200W; VGS +/-16V
International Rectifier
Trans MOSFET N-CH Si 40V 130A 3Pin(3+Tab) TO-262
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