| TYPE | DESCRIPTION |
|---|
| Number of Pins | 3 Pin |
| Case/Package | TO-263 |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
The IRGS4062DPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It features rugged transient performance for increased reliability and excellent current sharing in parallel operation. It is suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses.
● Low VCE (ON) Trench IGBT technology
● Square RBSOA
● 100% of Parts tested for 4X rated current (ILM)
● Positive VCE (ON) temperature coefficient
● Ultrafast soft recovery co-pack diode
● Tight parameter distribution
● High efficiency in a wide range of applications
● Low EMI
● 5µs Short-circuit SOA
Infineon
12 Pages / 0.44 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
3 Pages / 0.07 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
6 Pages / 0.15 MByte
Infineon
INFINEON IRGS4062DPBF IGBT Single Transistor, 48A, 1.6V, 250W, 600V, TO-263, 2Pins
International Rectifier
Trans IGBT Chip N-CH 600V 48A 3Pin(2+Tab) D2PAK Tube
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