| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | REEL |
| Polarity | N-Channel |
| Rise Time | 25.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
The IRGPS40B120UPBF is an Insulated Gate Bipolar Transistor features non-punch through IGBT technology and excellent current sharing in parallel operation.
● Square RBSOA
● Positive VCE (on) temperature coefficient
● Rugged transient performance
● Low EMI
● Significantly less snubber required
● 10µs Short-circuit capability
Infineon
10 Pages / 0.1 MByte
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8 Pages / 0.13 MByte
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2 Pages / 0.17 MByte
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3 Pages / 0.13 MByte
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1 Pages / 0.12 MByte
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Trans IGBT Chip N-CH 1200V 80A 595000mW 3Pin(3+Tab) TO-274AA Tube
International Rectifier
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Trans IGBT Chip N-CH 1200V 80A 595000mW 3Pin(3+Tab) TO-274AA Tube
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INTERNATIONAL RECTIFIER IRGPS40B120UPBF IGBT Single Transistor, 80A, 3.5V, 595W, 1.2kV, TO-274AA, 3Pins
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1200V UltraFast 8-25kHz Single IGBT in a TO-274AA package
IRF
INSULATED GATE BIPOLAR TRANSISTOR
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