| TYPE | DESCRIPTION |
|---|
| Case/Package | TO-274AA |
The IRGPS40B120UDP is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It features ultra-soft diode reverse recovery characteristics and excellent current sharing in parallel operation.
● Non-punch through IGBT technology
● Low diode VF
● Square RBSOA
● Positive VCE (on) temperature coefficient
● Rugged transient performance
● Low EMI
● Significantly less snubber required
● 10µs Short-circuit capability
Infineon
12 Pages / 0.12 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
12 Pages / 0.12 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
3 Pages / 0.13 MByte
Infineon
Trans IGBT Chip N-CH 1200V 80A 595000mW 3Pin(3+Tab) TO-274AA Tube
International Rectifier
Trans IGBT Chip N-CH 1.2kV 80A 3Pin(3+Tab) TO-274AA Tube
Infineon
Trans IGBT Chip N-CH 1200V 80A 595000mW 3Pin(3+Tab) TO-274AA Tube
International Rectifier
INTERNATIONAL RECTIFIER IRGPS40B120UPBF IGBT Single Transistor, 80A, 3.5V, 595W, 1.2kV, TO-274AA, 3Pins
International Rectifier
Trans IGBT Chip N-CH 1.2kV 80A 3Pin(3+Tab) TO-274AA
International Rectifier
1200V UltraFast 8-25kHz Single IGBT in a TO-274AA package
IRF
INSULATED GATE BIPOLAR TRANSISTOR
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