| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | REEL |
| Polarity | N-Channel |
| Rise Time | 22.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
The IRGB4062DPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It features rugged transient performance for increased reliability and excellent current sharing in parallel operation. It is suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses.
● Low VCE (ON) Trench IGBT technology
● Low switching losses
● Square RBSOA
● 100% of Parts tested for ILM
● Positive VCE (ON) temperature coefficient
● Ultrafast soft recovery co-pack diode
● Tight parameter distribution
● High efficiency in a wide range of applications
● Low EMI
● 5µs Short-circuit SOA
Infineon
13 Pages / 0.4 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
12 Pages / 0.57 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
IGBT Single Transistor, 48A, 1.65V, 250W, 600V, TO-220, 3Pins
International Rectifier
INTERNATIONAL RECTIFIER IRGB4062DPBF IGBT Single Transistor, 48A, 1.65V, 250W, 600V, TO-220, 3Pins
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