| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220AB |
| Polarity | N-Channel |
| Rise Time | 28.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
The IRGB30B60KPBF is an Insulated Gate Bipolar Transistor features low VCE (on) non-punch through IGBT technology and rugged transient performance.
● Square RBSOA
● Positive VCE (on) temperature coefficient
● Low EMI
● Excellent current sharing in parallel operation
● 10µs Short-circuit capability
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INSULATED GATE BIPOLAR TRANSISTOR
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