| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-274AA |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
The IRG7PSH73K10PBF is an Insulated Gate Bipolar Transistor suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses. It features rugged transient performance for increased reliability and excellent current sharing in parallel operation.
● Low VCE (ON) Trench IGBT technology
● Low switching losses
● Square RBSOA
● 100% of Parts tested for ILM
● Positive VCE (ON) temperature coefficient
● Tight parameter distribution
● High efficiency in a wide range of applications
● 10µs Short-circuit SOA
Infineon
9 Pages / 0.37 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
9 Pages / 0.37 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
3 Pages / 0.05 MByte
Infineon
IGBT Single Transistor, 220A, 2V, 1.15kW, 1.2kV, TO-274AA, 3Pins
International Rectifier
INTERNATIONAL RECTIFIER IRG7PSH73K10PBF IGBT Single Transistor, 220A, 2V, 1.15kW, 1.2kV, TO-274AA, 3Pins
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