TYPE | DESCRIPTION |
---|
Case/Package | TO-247 |
The IRG4PH50KPBF is an Insulated Gate Bipolar Transistor combines low conduction losses with high switching speed. It feature latest generation design provides tighter parameter distribution and higher efficiency than previous generations. As a freewheeling diode recommend our HEXFRED™ ultrafast, ultra-soft recovery diodes for minimum EMI/noise and switching losses in the diode and IGBT.
● Latest generation 4 IGBT"s offer highest power density motor controls possible
Infineon
7 Pages / 0.35 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
7 Pages / 0.35 MByte
Infineon
2 Pages / 0.17 MByte
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V,
IRF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A)
International Rectifier
IGBT 1200V 45A 200W TO247AC
Infineon
Trans IGBT Chip N-CH 1.2kV 45A 3Pin(3+Tab) TO-247AC
Infineon
IGBT Single Transistor, 45A, 2.77V, 200W, 1.2kV, TO-247AC, 3Pins
Infineon
Trans IGBT Chip N-CH 1200V 45A 200000mW 3Pin(3+Tab) TO-247AC Tube
Infineon
Trans IGBT Chip N-CH 1200V 45A 200000mW 3Pin(3+Tab) TO-247AC Tube
International Rectifier
Trans IGBT Chip N-CH 1200V 57A 200000mW 3Pin(3+Tab) TO-247AC Tube
Infineon
INFINEON IRG4PH50S-EPBF IGBT Single Transistor, Standard Speed, N-CH, 57A, 1.75V, 200W, 1.2kV, TO-247AD, 3Pins
Infineon
Trans IGBT Chip N-CH 1200V 57A 200000mW 3Pin(3+Tab) TO-247AC Tube
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