| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | REEL |
| Polarity | N-Channel |
| Rise Time | 26.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
The IRG4PF50WPBF is a 900V Warp 20 to 100kHz IGBT designed for switch mode power supply, welding and PFC applications. Latest generation IGBT design and construction offers tighter parameters distribution and exceptional reliability. Low conduction losses and minimal minority carrier recombination makes as an excellent option for resonant mode switching (up to >100kHz).
● 50% Reduction of Eoff parameter
● Lower switching losses allow more effective operation in replacing large die MOSFET up to 100kHz
Infineon
9 Pages / 0.63 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
20 Pages / 2.6 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
1 Pages / 0.13 MByte
Infineon
Trans IGBT Chip N-CH 900V 51A 200000mW 3Pin(3+Tab) TO-247AC Tube
International Rectifier
Trans IGBT Chip N-CH 900V 51A 200000mW 3Pin(3+Tab) TO-247AC Tube
Infineon
Trans IGBT Chip N-CH 900V 51A 3Pin(3+Tab) TO-247AC
Infineon
Trans IGBT Chip N-CH 900V 51A 200000mW 3Pin(3+Tab) TO-247AC Tube
International Rectifier
INTERNATIONAL RECTIFIER IRG4PF50WDPBF IGBT Single Transistor, 51A, 2.25V, 200W, 900V, TO-247AC, 3Pins
Infineon
Trans IGBT Chip N-CH 900V 51A 3Pin(3+Tab) TO-247AC
International Rectifier
900V Warp 20-100kHz Copack IGBT in a TO-247AC package
International Rectifier
Trans IGBT Chip N-CH 900V 51A 3Pin(3+Tab) TO-247AC
International Rectifier
900V Warp 20-100kHz Discrete IGBT in a TO-247AC package
IRF
INSULATED GATE BIPOLAR TRANSISTOR
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