| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247AC |
| Polarity | N-Channel |
| Rise Time | 9.60 ns |
The IRG4PC30UPBF is an Insulated Gate Bipolar Transistor optimized for high operating frequencies 8 to 40kHz in hard switching, >200kHz in resonant mode. The generation 4 IGBT design provides tighter parameter distribution and higher efficiency than generation 3.
● Optimized for specific application conditions
● Designed to be a drop-in replacement for equivalent industry-standard generation 3 IR IGBTs
Infineon
8 Pages / 0.26 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
20 Pages / 2.6 MByte
Infineon
2 Pages / 0.17 MByte
IRF
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)
Infineon
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IGBT Single Transistor, 28A, 2.7V, 100W, 600V, TO-247AC, 3Pins
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Trans IGBT Chip N-CH 600V 23A 100000mW 3Pin(3+Tab) TO-247AC Tube
Infineon
Trans IGBT Chip N-CH 600V 23A 100000mW 3Pin(3+Tab) TO-247AC Tube
International Rectifier
INTERNATIONAL RECTIFIER IRG4PC30UDPBF IGBT Single Transistor, 23A, 2.52V, 100W, 600V, TO-247AC, 3Pins
International Rectifier
Trans IGBT Chip N-CH 600V 28A 3Pin(3+Tab) TO-247AC Tube
Infineon
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International Rectifier
Trans IGBT Chip N-CH 600V 31A 100000mW 3Pin(3+Tab) TO-247AC Tube
Infineon
Trans IGBT Chip N-CH 600V 31A 100000mW 3Pin(3+Tab) TO-247AC Tube
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