| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Polarity | N-Channel |
| Power Dissipation | 100 W |
| Rise Time | 42.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
The IRG4PC30KDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. The HEXFRED™ diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses.
● Combines low conduction losses with high switching speed
● Tighter parameter distribution and higher efficiency than previous generations
● IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft recovery anti-parallel diodes
● Latest generation 4 IGBTs offer highest power density motor controls possible
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