| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | REEL |
| Polarity | N-Channel |
| Rise Time | 21.0 ns |
The IRG4IBC30UDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It is optimized for high operating frequencies 8 to 40kHz in hard switching, >200kHz in resonant mode. The IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft recovery anti-parallel diodes.
● Tighter parameter distribution
● Simplified assembly
● High efficiency and power density
● HEXFRED™ anti-parallel diode minimizes switching losses and EMI
● 4.8mm Creepage distance to heat sink
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