| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 Full Pack |
| Polarity | N-Channel |
| Rise Time | 16.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
●Co-Pack IGBT up to 20A, Infineon
●Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.
Infineon
10 Pages / 0.29 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
Trans IGBT Chip N-CH 600V 6.8A 25000mW 3Pin(3+Tab) TO-220 Full-Pak Tube
International Rectifier
Trans IGBT Chip N-CH 600V 6.8A 25000mW 3Pin(3+Tab) TO-220 Full-Pak Tube
Infineon
Trans IGBT Chip N-CH 600V 6.8A 3Pin (3+Tab) TO-220 Full-Pak
International Rectifier
IGBT W/DIODE 600V 6.8A TO-220FP
IRF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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