| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Polarity | N-Channel |
| Rise Time | 23.0 ns |
The IRG4BC40W-SPBF is an Insulated Gate Bipolar Transistor designed expressly for switch-mode power supply and PFC (power factor correction) applications. The latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability. It features lower switching losses allow more cost-effective operation than power MOSFETs up to 150kHz (hard switched mode). Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >300kHz).
● Industry-benchmark switching losses improve efficiency of all power supply topologies
● 50% Reduction of Eoff parameter
● Low IGBT conduction losses
● Particular benefit to single-ended converters and boost PFC topologies 150W and higher
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