| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220AB |
| Polarity | N-Channel |
| Rise Time | 18.0 ns |
The IRG4BC30SPBF is an Insulated Gate Bipolar Transistor optimized for minimum saturation voltage and low operating frequencies (<1kHz). The generation 4 IGBT design provides tighter parameter distribution and higher efficiency than generation 3.
● Optimized for specific application conditions
● Designed to be a drop-in replacement for equivalent industry-standard generation 3 IR IGBTs
Infineon
8 Pages / 0.27 MByte
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3 Pages / 0.36 MByte
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4 Pages / 0.08 MByte
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2 Pages / 0.17 MByte
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1 Pages / 0.13 MByte
IRF
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
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Trans IGBT Chip N-CH 600V 31A 100000mW 3Pin(3+Tab) TO-220AB Tube
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Trans IGBT Chip N-CH 600V 23A 100000mW 3Pin(2+Tab) D2PAK Tube
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Trans IGBT Chip N-CH 600V 31A 3Pin (3+Tab) TO-220AB
International Rectifier
Trans IGBT Chip N-CH 600V 34A 3Pin(2+Tab) D2PAK
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Trans IGBT Chip N-CH 600V 28A 3Pin(2+Tab) D2PAK
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Trans IGBT Chip N-CH 600V 28A 3Pin (3+Tab) TO-220AB
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Trans IGBT Chip N-CH 600V 23A 100000mW 3Pin(3+Tab) TO-220AB Tube
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Trans IGBT Chip N-CH 600V 34A 100000mW 3Pin(3+Tab) TO-220AB Tube
Infineon
INFINEON IRG4BC30FD-SPBF IGBT Single Transistor, 31A, 1.8V, 100W, 600V, TO-263, 3Pins
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