| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220AB |
| Polarity | N-Channel |
| Rise Time | 13.0 ns |
The IRG4BC20UPBF is an Insulated Gate Bipolar Transistor optimized for high operating frequencies 8 to 40kHz in hard switching, >200kHz in resonant mode. The generation 4 IGBT design provides tighter parameter distribution and higher efficiency than generation 3.
● Optimized for specific application conditions
● Designed to be a drop-in replacement for equivalent industry-standard generation 3 IR IGBTs
Infineon
9 Pages / 0.16 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
20 Pages / 2.6 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
1 Pages / 0.13 MByte
Infineon
INFINEON IRG4BC20KD-SPBF IGBT Single Transistor, 16A, 3.01V, 60W, 600V, TO-263, 3Pins
Infineon
Trans IGBT Chip N-CH 600V 16A 60000mW 3Pin(3+Tab) TO-220AB Tube
Infineon
Trans IGBT Chip N-CH 600V 16A 60000mW 3Pin(3+Tab) TO-220AB Tube
Infineon
Trans IGBT Chip N-CH 600V 13A 60000mW 3Pin(3+Tab) TO-220AB Tube
Infineon
Trans IGBT Chip N-CH 600V 13A 60000mW 3Pin(3+Tab) TO-220AB Tube
International Rectifier
Trans IGBT Chip N-CH 600V 13A 60000mW 3Pin(3+Tab) TO-220AB Tube
Infineon
Trans IGBT Chip N-CH 600V 19A 60000mW 3Pin(3+Tab) TO-220AB Tube
Infineon
Trans IGBT Chip N-CH 600V 13A 60000mW 3Pin(3+Tab) TO-220AB Tube
Infineon
Trans IGBT Chip N-CH 600V 16A 60000mW 3Pin(2+Tab) D2PAK T/R
Infineon
Trans IGBT Chip N-CH 600V 16A 60000mW 3Pin(3+Tab) TO-220AB Tube
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
