| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220AB |
| Polarity | N-Channel |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
The IRG4BC20KDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It is optimized for high operating frequency of >5kHz and short-circuit rated to 10µs at 125°C, VGE = 15V. The generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation. The IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations. The HEXFRED™ diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses.
● Latest generation 4 IGBTs offer highest power density motor controls possible
● 32A Pulsed collector current
● 10µs Short-circuit withstand time
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