INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
●Features
●•Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short
●Circuit Rated to 10µs @ 125°C, VGE= 15V
●•Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
●previous generation
●•IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in
●bridge configurations
●•Industry standard TO-220AB package
●Benefits
●•Latest generation 4 IGBTs offer highest power density motor controls possible
●•HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses
●•This part replaces the IRGBC20KD2 and IRGBC20MD2 products
●•For hints see design tip 97003
