| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 72.0 A |
| Case/Package | TO-220AB |
| Polarity | N-Channel |
| Power Dissipation | 150 W |
| Part Family | IRFZ48V |
| Drain to Source Voltage (Vds) | 60.0 V |
| Breakdown Voltage (Drain to Source) | 60.0 V |
| Continuous Drain Current (Ids) | 72.0 A |
| Rise Time | 200 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
●N-Channel Power MOSFET 60A to 79A, Infineon
●Infineon"s range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
International Rectifier
11 Pages / 0.41 MByte
International Rectifier
20 Pages / 2.6 MByte
IRF
Power MOSFET(Vdss=60V, Rds(on)=0.018Ω, Id=50*A)
International Rectifier
Trans MOSFET N-CH 55V 64A 3Pin(3+Tab) TO-220AB
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 14 Milliohms; ID 64A; TO-220AB; PD 130W; gFS 24S
International Rectifier
MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 12 Milliohms; ID 72A; TO-220AB; PD 150W; gFS 35S
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