| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | REEL |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 55V |
| Continuous Drain Current (Ids) | 64A |
The IRFZ48NSPBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The surface-mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible ON-resistance in any existing surface-mount package. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
● Advanced process technology
● Fast switching
● Fully avalanche rating
● Low static drain-to-source ON-resistance
● Dynamic dV/dt rating
Infineon
11 Pages / 0.29 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
9 Pages / 0.14 MByte
IRF
Power MOSFET(Vdss=60V, Rds(on)=0.018Ω, Id=50*A)
International Rectifier
Trans MOSFET N-CH 55V 64A 3Pin(3+Tab) TO-220AB
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 14 Milliohms; ID 64A; TO-220AB; PD 130W; gFS 24S
International Rectifier
MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 12 Milliohms; ID 72A; TO-220AB; PD 150W; gFS 35S
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