TYPE | DESCRIPTION |
---|
Case/Package | REEL |
Polarity | N-CH |
Drain to Source Voltage (Vds) | 55V |
Continuous Drain Current (Ids) | 53A |
The IRFZ46NPBF is a 55V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
● 175°C Operating temperature
● Dynamic dV/dt rating
● Fully avalanche rated
Infineon
8 Pages / 0.21 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
1 Pages / 0.14 MByte
IRF
Power MOSFET(Vdss=55V, Rds(on)=16.5mohm, Id=53A)
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 16.5 Milliohms; ID 53A; TO-220AB; PD 107W; -55de
International Rectifier
Trans MOSFET N-CH 55V 53A 3Pin(2+Tab) D2PAK T/R
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