TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220AB |
Polarity | N-Channel |
Drain to Source Voltage (Vds) | 50.0 V |
Continuous Drain Current (Ids) | 35.0 A |
TYPE | DESCRIPTION |
---|
Packaging | Tube |
The IRFZ40PBF is a HEXFET® third generation N-channel Power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is universally preferred for commercial-industrial applications at power dissipation levels to approximately 50W.
● Dynamic dV/dt rating
● Fast switching
● Ease of paralleling
● Simple drive requirements
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