| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 60.0 V |
| Continuous Drain Current (Ids) | 30.0 A |
The IRFZ34PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is universally preferred for power dissipation levels to approximately 50W. The low thermal resistance of the package contributes to its wide acceptance throughout the industry.
VISHAY
9 Pages / 1.59 MByte
Vishay Siliconix
MOSFET N-CH 60V 30A TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 60V 30A 3Pin(3+Tab) TO-220AB
IRF
Power MOSFET(Vdss=55V, Rds(on)=0.04Ω, Id=26A)
International Rectifier
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
VISHAY
TO-220-3 N-CH 60V 30A 50mΩ
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.04Ω; ID 29A; TO-220AB; PD 68W; VGS +/-20V
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