Description
●Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
●• Advanced Process Technology
●• Dynamic dv/dt Rating
●• 175°C Operating Temperature
●• Fast Switching
●• Fully Avalanche Rated
International Rectifier
0.11 MByte
International Rectifier
Transistor NPN MOS IRFZ24 INTERNATIONAL RECTIFIER TO220
Vishay Semiconductor
Trans MOSFET N-CH 60V 17A 3Pin(3+Tab) TO-220AB
Vishay Siliconix
MOSFET N-CH 60V 17A TO-220AB
International Rectifier
Trans MOSFET N-CH 55V 17A 3Pin (3+Tab) TO-220AB
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.07Ω; ID 17A; TO-220AB; PD 45W; VGS +/-20V
International Rectifier
Trans MOSFET N-CH 55V 17A 3Pin(2+Tab) D2PAK
International Rectifier
Trans MOSFET N-CH 55V 17A 3Pin(2+Tab) D2PAK T/R
Vishay Semiconductor
Trans MOSFET N-CH 60V 17A 3Pin(3+Tab) TO-220AB
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