TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 60.0 V |
Current Rating | 10.0 A |
Case/Package | TO-220AB |
Polarity | N-Channel |
Power Dissipation | 36.0 W |
Drain to Source Voltage (Vds) | 60.0 V |
Breakdown Voltage (Drain to Source) | 60.0 V |
Continuous Drain Current (Ids) | 10.0 A |
Rise Time | 50.0 ns |
TYPE | DESCRIPTION |
---|
Packaging | Tube |
The IRFZ14PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is universally preferred for power dissipation levels to approximately 50W. The low thermal resistance of the package contributes to its wide acceptance throughout the industry.
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