| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -100 V |
| Current Rating | -5.60 A |
| Case/Package | TO-251AA |
| Polarity | P-Channel |
| Power Dissipation | 42.0 W |
| Drain to Source Voltage (Vds) | -100 V |
| Continuous Drain Current (Ids) | -5.60 A |
| Rise Time | 29.0 ns |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
| Lead Length | 9.65 mm |
The IRFU9120PBF is a third generation P-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The straight lead version is for through-hole mounting applications. Power dissipation levels up to 1.5W are possible in typical surface-mount applications.
● Dynamic dV/dt rating
● Straight lead
● Repetitive avalanche rated
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