| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Voltage Rating (DC) | -100 V |
| Current Rating | -6.60 A |
| Case/Package | TO-251-3 Long Leads, IPak, TO-251AB |
| Polarity | P-Channel |
| Power Dissipation | 39.0 W |
| Part Family | IRFU9120N |
| Drain to Source Voltage (Vds) | -100 V |
| Breakdown Voltage (Drain to Source) | -100 V |
| Continuous Drain Current (Ids) | -6.60 A |
| Rise Time | 47.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
●P-Channel Power MOSFETs up to 7A, Infineon
●Infineon"s range of diskrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
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