| TYPE | DESCRIPTION |
|---|
| Case/Package | REEL |
| Polarity | P-Channel |
| Drain to Source Voltage (Vds) | 100V |
| Continuous Drain Current (Ids) | 6.6A |
Benefits:
● RoHS Compliant
● Low RDS(on)
● Industry-leading quality
● Dynamic dv/dt Rating
● Fast Switching
● Fully Avalanche Rated
● 175°C Operating Temperature
● P-Channel MOSFET
Infineon
11 Pages / 0.25 MByte
Infineon
7 Pages / 0.14 MByte
Infineon
2 Pages / 0.17 MByte
Intersil
5.6A, 100V, 0.6Ω, P-Channel Power MOSFETs
International Rectifier
MOSFET P-CH 100V 5.6A I-PAK
Vishay Siliconix
MOSFET P-CH 100V 5.6A I-PAK
Vishay Semiconductor
Trans MOSFET P-CH 100V 5.6A 3Pin(3+Tab) IPAK
Harris
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
International Rectifier
Trans MOSFET P-CH 100V 6.6A 3Pin(3+Tab) IPAK Tube
Vishay Semiconductor
MOSFET, Power; P-Ch; VDSS -100V; RDS(ON) 0.6Ω; ID -5.6A; TO-251AA; PD 2.5W; VGS +/-20
VISHAY
TO-251-3P-CH 100V 6.6A 480mΩ
Vishay Siliconix
MOSFET P-CH 100V 5.6A I-PAK
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