| TYPE | DESCRIPTION |
|---|
| Number of Pins | 3 Pin |
| Case/Package | REEL |
| Polarity | P-Channel |
| Drain to Source Voltage (Vds) | 55V |
| Continuous Drain Current (Ids) | 18A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
The IRFU5505PBF is a HEXFET® fifth generation single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation for use in a wide variety of applications. The straight lead version is for through-hole mounting applications.
● Advanced process technology
● Fast switching
● Fully avalanche rating
● Low static drain-to-source ON-resistance
● Dynamic dV/dt rating
● Halogen-free
Infineon
10 Pages / 0.26 MByte
Infineon
11 Pages / 1.36 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
6 Pages / 0.15 MByte
Infineon
1 Pages / 0.14 MByte
International Rectifier
MOSFET P-CH 55V 18A I-PAK
IRF
Power MOSFET(Vdss=-55V, Rds(on)=0.11Ω, Id=-18A)
International Rectifier
Trans MOSFET P-CH 55V 18A 3Pin(3+Tab) IPAK Tube
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