TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | REEL |
Polarity | N-Channel |
Drain to Source Voltage (Vds) | 200V |
Continuous Drain Current (Ids) | 5A |
The IRFU220NPBF is a HEXFET® single N-channel Power MOSFET offers low gate-to-drain charge to reduce switching losses. It is suitable for high frequency DC-to-DC converters.
● Fully characterized capacitance including effective COSS to simplify design
● Fully characterized avalanche voltage and current
● Low static drain-to-source ON-resistance
● Dynamic dV/dt rating
● Fast switching
● Fully avalanche rating
Infineon
11 Pages / 0.21 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
6 Pages / 0.15 MByte
Infineon
1 Pages / 0.15 MByte
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