TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Case/Package | REEL |
Polarity | N-Channel |
Drain to Source Voltage (Vds) | 60V |
Continuous Drain Current (Ids) | 338A |
The IRFS7530TRL7PP is a 60V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. The StrongIRFET™ HEXFET® power MOSFET is suitable for battery powered circuits, synchronous rectifier applications, half-bridge and full-bridge topologies.
● Improved gate, avalanche and dynamic dv/dt ruggedness
● Fully characterized capacitance and avalanche SOA
● Enhanced body diode dV/dt and dI/dt capability
Infineon
11 Pages / 0.55 MByte
Infineon
2 Pages / 0.17 MByte
International Rectifier
The IRFS7530TRL7PP is a 60V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. The StrongIRFET™ HEXFET® power MOSFET is suitable for battery powered circuits, synchronous rectifier applications, half-bridge and full-bridge topologies.
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