TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Case/Package | REEL |
Polarity | N-Channel |
Drain to Source Voltage (Vds) | 250V |
Continuous Drain Current (Ids) | 45A |
The IRFS4229PBF is a HEXFET® single N-channel Power MOSFET designed for sustain, energy recovery and pass switch applications in plasma display panels. It utilizes the latest processing techniques to achieve low ON-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
● Advanced process technology
● Low Qg for fast response
● High repetitive peak current capability for reliable operation
● Short fall and rise times for fast switching
● Repetitive avalanche capability for robustness and reliability
Infineon
9 Pages / 0.3 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
9 Pages / 0.14 MByte
International Rectifier
250V Single N-Channel HEXFET Power MOSFET PDP Switch in a D2-Pak package
International Rectifier
Trans MOSFET N-CH 250V 45A 3Pin(2+Tab) D2PAK Tube
International Rectifier
Trans MOSFET N-CH 250V 45A 3Pin(2+Tab) D2PAK T/R
IFA
N-Channel 250V 48mΩ 72NC Surface Mount Hexfet Power Mosfet - D2PAK
IFA
N-Channel 250V 48mΩ 72NC Surface Mount Hexfet Power Mosfet - D2PAK
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.