| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 200 V |
| Current Rating | 38.0 A |
| Case/Package | REEL |
| Polarity | N-Channel |
| Power Dissipation | 320 W |
| Part Family | IRFS38N20D |
| Input Capacitance | 2.90 nF |
| Drain to Source Voltage (Vds) | 200 V |
| Breakdown Voltage (Drain to Source) | 200 V |
| Continuous Drain Current (Ids) | 44.0 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape |
The IRFS38N20DPBF is a HEXFET® single N-channel Power MOSFET offers fully characterized capacitance including effective COSS to simplify design. It is suitable for high frequency DC-to-DC converters and plasma display panel.
● Fully characterized avalanche voltage and current
● Low gate-to-drain charge to reduce switching losses
Infineon
11 Pages / 0.32 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
9 Pages / 0.14 MByte
International Rectifier
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International Rectifier
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IRF
Power MOSFET(Vdss=200V, Rds(on)max=0.054Ω, Id=44A)
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