TYPE | DESCRIPTION |
---|
Case/Package | REEL |
Polarity | N-CH |
Drain to Source Voltage (Vds) | 60V |
Continuous Drain Current (Ids) | 160A |
The IRFS3306PBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits.
● Fully characterized capacitance and avalanche SOA
● Enhanced body diode dV/dt and di/dt capability
Infineon
12 Pages / 0.31 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
9 Pages / 0.14 MByte
Infineon
1 Pages / 0.13 MByte
International Rectifier
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